The 2N3904 is designed as one kind of NPN epitaxial silicon transistor.The absolute maximum ratings of the 2N3904 can be summarized as:(1)collector-base voltage:60 V (2)collector-emitter voltage:40 V (3)emitter-base voltage:6 V (4)collector current:200 mA (5)collector dissipation:625 mW (6)junction temp-erature:150 (7)storage temperature:-55 to 150.Īlso the electrical characteristics of the 2N3904 can be summarized as:(1)collector-base breakdown voltage:60 V (2)collector-emitter breakdown voltage:40 V (3)emitter-base breakdown voltage:6 V (4)collector cut-off curent:50 nA (5)base cut-off current:50 nA (6)DC current gain (Ic=0.1mA,VCE=1V):40 (7)collector-emitter saturation voltage (IC=10 mA,IB=1mA):0.2 V (8)collector-emitter saturation voltage (IC=50mA,IB=5mA):0.3 V (9)output capacitance (VCB=5V,IE=0 f=1MHz):4 pF (10)current gain bandwidth produce (Ic=10 mA,VCE=20V f=100MHz):300 MHz.If you want to know more information such as the electrical characteristics about the 2N3904,please download the datasheet in or. The 2N3904 is manufactured in a plastic TO-92 case. Package marking information for product 2N3904 is available. For additional information on our Pb-Free strategy and soldering details, please download the onsemi Soldering and Mounting Techniques Reference Manual.

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